发明授权
- 专利标题: Structure and fabrication method for stackable, air-gap-containing low epsilon dielectric layers
- 专利标题(中): 可堆叠,含气隙的低ε电介质层的结构和制造方法
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申请号: US192133申请日: 1998-11-13
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公开(公告)号: US6017814A公开(公告)日: 2000-01-25
- 发明人: Alfred Grill , Katherine Lynn Saenger
- 申请人: Alfred Grill , Katherine Lynn Saenger
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/44
摘要:
A structured dielectric layer and fabrication process for separating wiring levels and wires within a level on a semiconductor chip is described incorporating a lower dielectric layer having narrow air gaps to form dielectric pillars or lines and an upper dielectric layer formed over the pillars or fine lines wherein the air gaps function to substantially reduce the effective dielectric constant of the structured layer. The invention overcomes the problem of solid dielectric layers which would have the higher dielectric constant of the solid material used.
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