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US6022756A Metal diaphragm sensor with polysilicon sensing elements and methods therefor 失效
具有多晶硅感应元件的金属膜片传感器及其方法

Metal diaphragm sensor with polysilicon sensing elements and methods therefor
摘要：
A sensor (10) having polysilicon strain-sensing elements (20) on a metal diaphragm (16). A thick-film insulating layer (18) covers the metal diaphragm (16), and thin-film polysilicon resistive elements (20) are formed on the thick-film insulating layer (18). Thick-film conductors (22) are formed on the thick-film insulating layer (18) and contact the thin-film polysilicon resistive elements (20) to form electrical interconnects to the resistive elements (20). The thick-film conductors (22) preferably contain silicon in order to reduce diffusion of silicon from the polysilicon resistive elements (20). The thick-film insulating layer (18) may be made up of a number of individual thick-film layers, the uppermost of which is stable and nonreactive with the thin-film polysilicon resistive elements (20) and the thick-film conductors (22) at temperatures of at least 600.degree. C. A passivation layer (24) overlies the thin-film polysilicon resistive elements (20) and the thick-film conductors (22). The sensor (10) can be made sufficiently rugged to be used as a structural member of a fluid-containing vessel.
摘要（中）：

一种在金属隔膜（16）上具有多晶硅应变传感元件（20）的传感器（10）。 厚膜绝缘层（18）覆盖金属膜（16），在厚膜绝缘层（18）上形成薄膜多晶硅电阻元件（20）。 在厚膜绝缘层（18）上形成厚膜导体（22），并与薄膜多晶硅电阻元件（20）接触以形成与电阻元件（20）的电互连。 厚膜导体（22）优选地含有硅以便减少硅从多晶硅电阻元件（20）的扩散。 厚膜绝缘层（18）可以由多个单独的厚膜层组成，其最上面的薄膜层与薄膜多晶硅电阻元件（20）和厚膜导体（22）是稳定的和非反应的 ）在至少600℃的温度下。钝化层（24）覆盖薄膜多晶硅电阻元件（20）和厚膜导体（22）。 传感器（10）可以制成足够坚固的以用作含流体容器的结构构件。

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