发明授权
- 专利标题： Deuterated direlectric and polysilicon film-based semiconductor devices and method of manufacture thereof
- 专利标题（中）： 氘代电介质和多晶硅薄膜半导体器件及其制造方法
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申请号： US847704申请日： 1997-04-28
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公开(公告)号： US6023093A公开(公告)日： 2000-02-08
- 发明人: Richard W. Gregor , Isik C. Kizilyalli
- 申请人： Richard W. Gregor , Isik C. Kizilyalli
- 申请人地址： NJ Murray Hill
- 专利权人： Lucent Technologies Inc.
- 当前专利权人： Lucent Technologies Inc.
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L21/205 ; H01L21/30 ; H01L21/336 ; H01L21/762 ; H01L21/8238 ; H01L27/10 ; H01L27/115 ; H01L29/49 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; H01L23/58
摘要：
A semiconductor device and a method of manufacturing the semiconductor device. The device includes: (1) a substrate composed at least in part of silicon and (2) a film located over the substrate and having a substantial concentration of an isotope of hydrogen located in the film.
公开/授权文献
- US4692153A Surgical wound drain device 公开/授权日：1987-09-08
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