发明授权
US6026055A Burst page access unit usable in a synchronous DRAM and other
semiconductor memory devices
失效
突发页面访问单元可用于同步DRAM和其他半导体存储器件
- 专利标题: Burst page access unit usable in a synchronous DRAM and other semiconductor memory devices
- 专利标题(中): 突发页面访问单元可用于同步DRAM和其他半导体存储器件
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申请号: US906544申请日: 1997-08-05
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公开(公告)号: US6026055A公开(公告)日: 2000-02-15
- 发明人: Jong Hoon Oh
- 申请人: Jong Hoon Oh
- 申请人地址: KRX
- 专利权人: Hyundai Electronics Industries Co., Ltd.
- 当前专利权人: Hyundai Electronics Industries Co., Ltd.
- 当前专利权人地址: KRX
- 优先权: KRX95-11882 19950515
- 主分类号: G11C11/41
- IPC分类号: G11C11/41 ; G11C7/10 ; G11C8/00
摘要:
A burst page access unit for a semiconductor memory device which has a plurality of memory cell arrays for storing bit data therein. The burst page access unit comprises a row decoder for decoding a row address signal from an address input line in response to a row address strobe signal to select a desired one of the memory cell arrays, an internal address counter for incrementing a column address signal from the address input line by one in response to a column address strobe signal to generate an internal column address signal, and a column decoding circuit for decoding the internal column address signal from the internal address counter to select a desired one of memory cells in the memory cell array selected by the row decoder. According to the present invention, the burst page access unit can enhance the successive data access speed to increase the bandwidth of the semiconductor memory device.
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