发明授权
US6027859A Semiconductor substrate having extended scribe line test structure and
method of fabrication thereof
失效
具有延长的划片线测试结构的半导体衬底及其制造方法
- 专利标题: Semiconductor substrate having extended scribe line test structure and method of fabrication thereof
- 专利标题(中): 具有延长的划片线测试结构的半导体衬底及其制造方法
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申请号: US992234申请日: 1997-12-17
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公开(公告)号: US6027859A公开(公告)日: 2000-02-22
- 发明人: Robert Dawson , Mark W. Michael , Fred Hause
- 申请人: Robert Dawson , Mark W. Michael , Fred Hause
- 申请人地址: CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: CA Sunnyvale
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
The present invention generally provides a semiconductor substrate having an extended test structure and a method of fabricating such a substrate. A method of forming an extended test structure on a semiconductor substrate, consistent with one embodiment of the invention, includes forming a first test structure pattern over a first portion of the substrate and forming a second test structure pattern of the second portion of the substrate which partially overlaps the first portion of the substrate such that the first test structure pattern and the second test structure overlap. The first test structure pattern may be formed using, for example, reticle and a second test structure pattern may be formed using the same reticle. The first and second test structure patterns may, for example, be formed in a scribe line of the substrate.
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