Structure of a wide voltage operation regime double heterojunction bipolar transistor, specifically a modified InGaP/GaAs double heterojunction bipolar transistor featuring a very broad collector-emitter voltage operation range, an invention of high speed, low power consumption and high breakdown voltage rated microwave power transistor. Unique in the incorporation of In.sub.0.49 Ga.sub.0.51 P collector layer, GaAs delta-doping sheet and undoped GaAs spacer in the collector zone. The introduction of a spacer with a delta doping sheet into the effective base-collector heterojunction serves to eliminate potential spike from appearing at base-collector interfacing any more, thus effectively precludes electron blocking effect. In the emitter zone the inventive design comprises a five-period In.sub.0.49 Ga.sub.0.51 P/GaAs superlatticed confinement layer to GaAs emitter homojunction, with superlatticed confinement layer functioning as a containment layer for minority (hole), while the base-emitter homojunction homojunction serves to control the majority (electron) being emitted from the emitter into the base. That achieves an enhanced emitter injection efficiency and lowered offset voltage at the same time, as such, the invention transistor is very fit for application in digital as well as analogue circuits preconditioned by high speed, low power consumption, and high breakdown voltage performances.