发明授权
- 专利标题： Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
- 专利标题（中）： 用于通过钛硅化物层连接半导体区域和电布线金属的半导体集成电路器件及其制造方法
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申请号： US747392申请日： 1996-11-12
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公开(公告)号： US6031288A公开(公告)日： 2000-02-29
- 发明人: Hiromi Todorobaru , Hideo Miura , Masayuki Suzuki , Shinji Nishihara , Shuji Ikeda , Masashi Sahara , Shinichi Ishida , Hiromi Abe , Atushi Ogishima , Hiroyuki Uchiyama , Sonoko Abe
- 申请人： Hiromi Todorobaru , Hideo Miura , Masayuki Suzuki , Shinji Nishihara , Shuji Ikeda , Masashi Sahara , Shinichi Ishida , Hiromi Abe , Atushi Ogishima , Hiroyuki Uchiyama , Sonoko Abe
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-295220 19951114; JPX8-031655 19960220
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/768 ; H01L21/8242 ; H01L23/485 ; H01L23/522 ; H01L27/108 ; H01L23/48
摘要：
A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide film formed in the contact holes. The thickness of the titanium silicide film is 10 nm to 120 nm or, preferably, 20 nm to 84 nm. Semiconductor regions and the electrical wiring metal are connected to each other through the titanium silicide film.
公开/授权文献
- US4609066A Mixed device for generating longitudinal or shear waves 公开/授权日：1986-09-02