发明授权
- 专利标题： Semiconductor memory device provided with an interface circuit consuming a reduced amount of current consumption
- 专利标题（中）： 具有消耗电流消耗量的接口电路的半导体存储器件
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申请号： US124514申请日： 1998-07-29
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公开(公告)号： US6031782A公开(公告)日： 2000-02-29
- 发明人: Hisao Kobashi , Mikio Sakurai , Susumu Tanida
- 申请人： Hisao Kobashi , Mikio Sakurai , Susumu Tanida
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX10-006499 19980116
- 主分类号： G11C11/41
- IPC分类号： G11C11/41 ; G11C7/00 ; G11C7/22 ; G11C11/403 ; G11C11/406 ; G11C11/407 ; G11C11/4076 ; G11C11/409 ; G11C11/417 ; H03F3/45
摘要：
A clock buffer in a semiconductor memory device includes two kinds of interface circuits, i.e., an LVTTL interface and an SSTL interface. When the semiconductor memory device is set to a specific mode (self-refresh mode) for suppressing a power consumption, the LVTTL is used for taking in an external signal. In a mode other than the self-refresh mode, the SSTL interface is used to take in an externally supplied signal. Thereby, a current can be suppressed in the specific mode.
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