Method of fabricating dual voltage MOS transistors

Invention Grant

US6033958A Method of fabricating dual voltage MOS transistors 失效

Title translation: 制造双电压MOS晶体管的方法

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Patent Title: Method of fabricating dual voltage MOS transistors
Patent Title (中): 制造双电压MOS晶体管的方法
Application No.: US108107

Application Date: 1998-06-30
Publication No.: US6033958A

Publication Date: 2000-03-07
Inventor: Jih-Wen Chou , Cheng-Han Huang
Applicant: Jih-Wen Chou , Cheng-Han Huang
Applicant Address: TWX Hsin-Chu
Assignee: United Microelectronics Corp.
Current Assignee: United Microelectronics Corp.
Current Assignee Address: TWX Hsin-Chu
Priority: TWX87105530 19980413
Main IPC: H01L21/8234
IPC: H01L21/8234

Method of fabricating dual voltage MOS transistors

Abstract:

A method of forming dual voltage MOS transistors includes first forming a mask layer, covering one of the at least two device regions and exposing another one of the two device regions. A gate oxide layer is then formed by thermal oxidation on the exposed device region. After removing the mask layer and exposing another gate oxide formed therebeneath, polysilicon gates for both of the two device regions can be formed.

Abstract(Chinese):

形成双电压MOS晶体管的方法包括：首先形成掩模层，覆盖所述至少两个器件区域中的一个并暴露两个器件区域中的另一个。然后通过在暴露的器件区域上的热氧化形成栅极氧化物层。在去除掩模层并暴露另外形成的栅极氧化物之后，可以形成用于两个器件区域的多晶硅栅极。

Public/Granted literature

USD426628S Combined natural sound reproduction and aroma dispensing device Public/Granted day:2000-06-13

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺