发明授权
- 专利标题: On-chip capacitor structure
- 专利标题(中): 片上电容器结构
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申请号: US126032申请日: 1998-07-29
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公开(公告)号: US06037621A公开(公告)日: 2000-03-14
- 发明人: William Burdett Wilson
- 申请人: William Burdett Wilson
- 申请人地址: NJ Murray Hill
- 专利权人: Lucent Technologies Inc.
- 当前专利权人: Lucent Technologies Inc.
- 当前专利权人地址: NJ Murray Hill
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L29/72
摘要:
An on-chip capacitor structure comprising a lower metal layer and an upper metal layer; an array of metal islands disposed between the lower and the upper metal layers; each island of the array of islands being electrically connected to either the lower layer or the upper layer such that no two adjacent islands are connected to the same layer.
公开/授权文献
- US4311833A Process for preparing ethylcarboxymethylcellulose 公开/授权日:1982-01-19
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