发明授权
US6038190A Electrically erasable and programmable non-volatile memory protected against power supply failure 有权
电可擦除和可编程的非易失性存储器,防止电源故障

Electrically erasable and programmable non-volatile memory protected
against power supply failure
摘要:
To reduce the risks of erroneous data writing into an electrically erasable and programmable non-volatile memory (10) (EEPROM) when a failure in the memory (10) voltage supply (Vcc) occurs during a programming or erasing operation, the memory (10) comprising means (30) of generating programming or erasing high voltage (Vpp), means (SW.sub.i, TI.sub.i,) are provided for maintaining the high voltage (Vpp) supply to the cells (C.sub.i,j) of the memory and capacity (Chv, CR.sub.2) of sufficient power to maintain the high voltage (Vpp) during the time required for the programming or erasing operation. The invention is useful particularly for EEPROM memories mounted on chip cards and electronic labels.
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