发明授权
- 专利标题: Method of forming a highly pure thin film and apparatus therefor
- 专利标题(中): 形成高纯度薄膜的方法及其设备
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申请号: US41099申请日: 1998-03-12
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公开(公告)号: US6039847A公开(公告)日: 2000-03-21
- 发明人: Akiyoshi Chayahara , Yuji Horino , Atsushi Kinomura , Nobuteru Tsubouchi , Kanenaga Fujii
- 申请人: Akiyoshi Chayahara , Yuji Horino , Atsushi Kinomura , Nobuteru Tsubouchi , Kanenaga Fujii
- 申请人地址: JPX Tokyo
- 专利权人: Agency of Industrial Science & Technology
- 当前专利权人: Agency of Industrial Science & Technology
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX9-183109 19970623
- 主分类号: C23C14/46
- IPC分类号: C23C14/46 ; H01J37/317 ; C23C14/34
摘要:
A material of ions is sputtered with cesium ions to generate negative ions and, the negative ions are accelerated and mass-separated to obtain a negative ion beam, and a material of thin film is sputtered with the negative ion beam, thereby forming a thin film on a base material.
公开/授权文献
- USD376531S Handle strap holder 公开/授权日:1996-12-17
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