发明授权
US6042971A Method of manufacturing an EB mask for electron beam image drawing and
device for manufacturing an EB mask
失效
制造电子束图像的EB掩模的方法和用于制造EB掩模的装置
- 专利标题: Method of manufacturing an EB mask for electron beam image drawing and device for manufacturing an EB mask
- 专利标题(中): 制造电子束图像的EB掩模的方法和用于制造EB掩模的装置
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申请号: US006503申请日: 1998-01-14
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公开(公告)号: US6042971A公开(公告)日: 2000-03-28
- 发明人: Takao Tamura , Hiroshi Yamashita , Ken Nakajima , Hiroshi Nozue
- 申请人: Takao Tamura , Hiroshi Yamashita , Ken Nakajima , Hiroshi Nozue
- 申请人地址: JPX Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX9-007833 19970120
- 主分类号: G03F1/20
- IPC分类号: G03F1/20 ; H01L21/027 ; G03F9/00
摘要:
The present invention consists in a method of creating an EB mask for electron beam image drawing, comprising: a step of extracting patterns for forming on an EB mask from design data stored in means for storage; a step of calculating an aperture area of an aperture section requested in an EB mask, using the design data contained in the extracted cell; a step of generating cell data for aperture creation using the value of this aperture area; and a step of forming a basic aperture pattern in an EB mask using this cell data for aperture creation.
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