发明授权
US6046106A High density plasma oxide gap filled patterned metal layers with
improved electromigration resistance
失效
具有改善的电迁移阻力的高密度等离子体氧化物间隙填充图案化金属层
- 专利标题: High density plasma oxide gap filled patterned metal layers with improved electromigration resistance
- 专利标题(中): 具有改善的电迁移阻力的高密度等离子体氧化物间隙填充图案化金属层
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申请号: US924133申请日: 1997-09-05
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公开(公告)号: US6046106A公开(公告)日: 2000-04-04
- 发明人: Khanh Q. Tran , Paul R. Besser , Guarionex Morales , Shekhar Pramanick
- 申请人: Khanh Q. Tran , Paul R. Besser , Guarionex Morales , Shekhar Pramanick
- 申请人地址: CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: CA Sunnyvale
- 主分类号: H01L21/321
- IPC分类号: H01L21/321 ; H01L21/768 ; H01L21/44
摘要:
Borderless submicron vias are formed between patterned metal layers gap filled with a high density plasma oxide. Heat treatment is conducted after chemical vapor deposition of the high density plasma oxide to substantially increase the grain size of the patterned metal layers, thereby improving electromigration resistance.
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