发明授权
US6052329A Output circuit and synchronous semiconductor memory device having a
function of preventing output of invalid data
失效
具有防止无效数据输出功能的输出电路和同步半导体存储器件
- 专利标题: Output circuit and synchronous semiconductor memory device having a function of preventing output of invalid data
- 专利标题(中): 具有防止无效数据输出功能的输出电路和同步半导体存储器件
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申请号: US120031申请日: 1998-07-21
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公开(公告)号: US6052329A公开(公告)日: 2000-04-18
- 发明人: Aiko Nishino , Hisashi Iwamoto
- 申请人: Aiko Nishino , Hisashi Iwamoto
- 申请人地址: JPX Tokyo JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha,Mitsubishi Electric Engineering Company Limited
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha,Mitsubishi Electric Engineering Company Limited
- 当前专利权人地址: JPX Tokyo JPX Tokyo
- 优先权: JPX10-019372 19980130
- 主分类号: G11C11/409
- IPC分类号: G11C11/409 ; G11C7/10 ; G11C7/22 ; G11C11/401 ; G11C11/407 ; G11C8/00
摘要:
An output circuit and a synchronous semiconductor memory device according to the invention suppress output of invalid data, and perform data output with exact timings. The synchronous semiconductor memory device includes a plurality of output buffers provided correspondingly to data I/O terminals, a plurality of data transfer latch circuits and a plurality of output control signal latch circuits. Data transfer latch circuit transfers data read from a memory cell to the corresponding output buffer in response to an internal clock signal. The output control signal latch circuit issues an output control signal to the corresponding output buffer in synchronization with the internal clock signal. Thereby, an output timing of each output buffer can be controlled independently of the other output buffer.
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