发明授权
- 专利标题： Semiconductor device and a method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US111882申请日： 1998-07-08
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公开(公告)号： US6060765A公开(公告)日： 2000-05-09
- 发明人: Atsushi Maeda
- 申请人： Atsushi Maeda
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX10-000019 19980105
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/336 ; H01L21/768 ; H01L23/52 ; H01L23/522 ; H01L29/78 ; H01L29/72
摘要：
A semiconductor device is provided which is improved to be capable of stably forming a contact hole. A stopper film is provided on a gate electrode. An interlayer insulating film is provided on a semiconductor substrate to cover the gate electrode. The interlayer insulating film and the stopper film are penetrated by a first contact hole which exposes a surface of the gate electrode. The interlayer insulating film is provided with a second contact hole for exposing a surface of an impurity diffusion layer. The stopper film is formed of a material higher in etch selectivity than the interlayer insulating film.
公开/授权文献
- USD263245S Multiple level chess board 公开/授权日：1982-03-02
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