发明授权
- 专利标题： Gas-tight article and a producing process thereof
- 专利标题（中）： 气密制品及其制造方法
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申请号： US47525申请日： 1998-03-25
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公开(公告)号： US6063514A公开(公告)日： 2000-05-16
- 发明人: Masao Nishioka , Yasufumi Aihara , Keiichiro Watanabe
- 申请人： Masao Nishioka , Yasufumi Aihara , Keiichiro Watanabe
- 申请人地址： JPX
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX9-105400 19970409
- 主分类号： C04B41/88
- IPC分类号： C04B41/88 ; C04B41/52 ; C04B41/89 ; C23C16/32 ; C23C16/56 ; H01L21/205 ; H01L21/302 ; H01L21/3065 ; H01L21/683 ; B32B19/00 ; B21F29/00 ; C04B38/06
摘要：
A gas-tight article includes a sintered body composed mainly of a silicon carbide, and a film of silicon carbide formed on a surface of the sintered body by chemical vapor deposition and covering said surface of the sintered body, wherein cracks are formed in the film of the silicon carbide, and the cracks are filled with metallic silicon.
公开/授权文献
- US1676926A High-frequency furnace 公开/授权日：1928-07-10
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