发明授权
US6066854A Method of writing cross pattern in adjacent areas of layer sensitive to
charged particle beam for improving stitching accuracy without
sacrifice of throughput
失效
在对带电粒子束敏感的层的相邻区域中写交叉图案的方法，以提高缝合精度，而不牺牲生产量
- 专利标题： Method of writing cross pattern in adjacent areas of layer sensitive to charged particle beam for improving stitching accuracy without sacrifice of throughput
- 专利标题（中）： 在对带电粒子束敏感的层的相邻区域中写交叉图案的方法，以提高缝合精度，而不牺牲生产量
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申请号： US138330申请日： 1998-08-24
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公开(公告)号： US6066854A公开(公告)日： 2000-05-23
- 发明人: Takao Tamura
- 申请人： Takao Tamura
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX9-226652 19970822
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01J37/302 ; H01J37/304
摘要：
A data processor compares a length of a pattern to be written into a layer sensitive to a charged particle beam with a critical length equal to the maximum length of a cross section of the charged particle beam or the maximum length of a variable sub-field to see whether or not the pattern is written through a radiation of the maximized cross section or through a radiation onto the maximized sub-field, and a main deflector and a sub-deflector guide a shot of charged particle beam to the layer if the answer is positive so that the pattern is prevented from deformation due to a low stitching accuracy.
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