发明授权
- 专利标题: Method for manufacturing a cathode tip of electric field emission device
- 专利标题(中): 电场发射装置的阴极尖端的制造方法
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申请号: US141121申请日: 1998-08-27
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公开(公告)号: US6069018A公开(公告)日: 2000-05-30
- 发明人: Yoon-Ho Song , Jin Ho Lee , Kyoung Ik Cho
- 申请人: Yoon-Ho Song , Jin Ho Lee , Kyoung Ik Cho
- 申请人地址: KRX Daejon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KRX Daejon
- 优先权: KRX58524 19971106
- 主分类号: H01J17/49
- IPC分类号: H01J17/49 ; H01L21/00
摘要:
A method for manufacturing a cathode tip of electric field emission device includes depositing conductive layer and undoped silicon layer on the insulator substrate sequentially; forming a tip-mask pattern on the selected area of top of said undoped silicon film and etching said undoped silicon film isotropically and then anisotropically in turn, so that the silicon film is formed as cone-like having cylinder; and removing the tip-mask pattern, implanting ion into the etched silicon layer and removing the ion implanted silicon layer using the wet etch process.
公开/授权文献
- US5370980A Silver halide photographic light-sensitive material 公开/授权日:1994-12-06
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