A square measure of a basic cell and a basic circuit cell of a semiconductor device used a SOI.cndot.CMOS technology is reduced. In the semiconductor device used a SOI.cndot.CMOS technology, the basic cells constituted by two pieces of PMOS and two pieces of NMOS are arranged in order of the PMOS, the PMOS, the NMOS and NMOS or NMOS, the NMOS, the PMOS and the PMOS in a row, and the diffused layer of a portion on which the PMOS and the NMOS adjoin are formed in a manner to adjoin directly. Moreover, the power source wiring and the grounding wiring are arranged around the basic cell in a manner to being held in common with the adjacent cells, and at least one of PMOS diffused layers is arranged so as to be able to be connected with a power source wiring through a contact directly and at least one of NMOS diffused layers is arranged so as to be able to be connected with a grounding wiring through a contact directly.