发明授权
- 专利标题: Thin film resistor and fabrication method thereof
- 专利标题(中): 薄膜电阻及其制造方法
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申请号: US905306申请日: 1997-08-01
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公开(公告)号: US6069398A公开(公告)日: 2000-05-30
- 发明人: Daniel Kadosh , Mark I. Gardner , Frederick N. Hause
- 申请人: Daniel Kadosh , Mark I. Gardner , Frederick N. Hause
- 申请人地址: CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: CA Sunnyvale
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L27/06 ; H01L29/00
摘要:
A resistor is formed between devices in an integrated circuit by forming a patterned trench in an intralayer dielectric (ILD) deposited over the devices, filling the trench with polysilicon and planarizing the polysilicon. The resistance of the resistor is defined by determining and selecting the size and form of the trench including the width, length, depth and orientation of the trench. In some embodiments, the resistance of the resistor is also controlled by adding selected amounts and species of dopants to the polysilicon. In some embodiments, the resistance is controlled by directly saliciding the polysilicon in the trench.
公开/授权文献
- US5278378A Microwave heating element with antenna structure 公开/授权日:1994-01-11