发明授权
- 专利标题: Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same
- 专利标题(中): 用于短波长光束的负型光致抗蚀剂组合物及其形成方法
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申请号: US140652申请日: 1998-08-26
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公开(公告)号: US06074801A公开(公告)日: 2000-06-13
- 发明人: Shigeyuki Iwasa , Katsumi Maeda , Kaichiro Nakano , Etsuo Hasegawa
- 申请人: Shigeyuki Iwasa , Katsumi Maeda , Kaichiro Nakano , Etsuo Hasegawa
- 申请人地址: JPX Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX9-231344 19970827; JPX10-023206 19980204
- 主分类号: C08L33/14
- IPC分类号: C08L33/14 ; G03F7/004 ; G03F7/038 ; H01L21/027
摘要:
A negative type photoresist composition is composed of a polymer which contains a repetition unit which is expressed by a general chemical formula (1), a crosslinker composed of a compound which contains a functional group which is expressed by a general chemical formula (2), and a photo-acid generator which generates acid in response to a light. The chemical formula (1) is as follows, ##STR1## In this case, R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is an alkylene group containing carbon atoms in a range of 7 to 18 and having a bridged cyclic hydrocarbon group, and a weight average molecule weight of the polymer is in a range of 1000 to 500000. Also, the chemical formula (2) is as follows, ##STR2## In this case, R.sup.8 is a hydrogen atom, an alkyl group containing carbon atoms in a range of 1 to 6 or an oxoalkyl group containing carbon atoms in a range of 3 to 6.
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