发明授权
US6078083A ESD protection circuit for dual 3V/5V supply devices using single
thickness gate oxides
失效
使用单层栅极氧化物的双3V / 5V电源器件的ESD保护电路
- 专利标题： ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides
- 专利标题（中）： 使用单层栅极氧化物的双3V / 5V电源器件的ESD保护电路
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申请号： US515752申请日： 1995-08-16
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公开(公告)号： US6078083A公开(公告)日： 2000-06-20
- 发明人: Ekanayake Ajith Amerasekera , Charvaka Duvvury
- 申请人： Ekanayake Ajith Amerasekera , Charvaka Duvvury
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L23/62
摘要：
An ESD protection circuit for dual 3V/5V supply devices. ESD protection circuit 10 comprises a switching element 12 connected between a bond pad 14 and primary protection device 16. Primary protection device 16 comprises MOS circuitry designed for 3V operation that suffers from oxide reliability problems when 5V signals are applied directly. Switching element 12 separates the primary protection device 16 from 5V signals which may appear at bond pad 14.
公开/授权文献
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