发明授权
US6080656A Method for forming a self-aligned copper structure with improved
planarity
有权
用于形成具有改善的平面度的自对准铜结构的方法
- 专利标题: Method for forming a self-aligned copper structure with improved planarity
- 专利标题(中): 用于形成具有改善的平面度的自对准铜结构的方法
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申请号: US387436申请日: 1999-09-01
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公开(公告)号: US6080656A公开(公告)日: 2000-06-27
- 发明人: Tsu Shih , Ying-Ho Chen , Jih-Churng Twu , Syun-Ming Jang
- 申请人: Tsu Shih , Ying-Ho Chen , Jih-Churng Twu , Syun-Ming Jang
- 申请人地址: TWX Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company
- 当前专利权人: Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址: TWX Hsin-Chu
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L21/4763 ; H01L21/44
摘要:
A method for forming a copper structure with reduced dishing, using a self-aligned copper electroplating process. The process begins by providing a semiconductor structure having a dielectric layer thereover, wherein the dielectric layer has a trench therein. A barrier layer is formed over the dielectric layer, a seed layer is formed on the barrier layer, and an insulating layer is formed on the seed layer. The insulating layer is patterned so as to expose the seed layer on the bottom and sidewalls of the trench, preferably using the trench photo mask. A copper layer is selectively electroplated onto the exposed seed layer on the bottom and sidewalls of the trench, while the insulating layer prevents copper deposition outside of the trench. The copper layer, the insulating layer, and the seed layer are planarized, stopping at the dielectric layer. Because of the self-aligned copper geometry, the copper suffers reduced dishing.