发明授权
US6081000A AlAs oxide insulating layer between a conductive III-V substrate and an
optoelectronic semiconductor device and method of manufacturing thereof
有权
导电III-V基片与光电半导体器件之间的AlAs氧化物绝缘层及其制造方法
- 专利标题： AlAs oxide insulating layer between a conductive III-V substrate and an optoelectronic semiconductor device and method of manufacturing thereof
- 专利标题（中）： 导电III-V基片与光电半导体器件之间的AlAs氧化物绝缘层及其制造方法
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申请号： US68573申请日： 1998-09-14
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公开(公告)号： US6081000A公开(公告)日： 2000-06-27
- 发明人: Alfred Lell
- 申请人： Alfred Lell
- 申请人地址： DEX Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DEX Munich
- 优先权： DEX19640005 19960927
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L33/00
摘要：
An optoelectronic semiconductor device, whereby at least one functional semiconductor structure is arranged on a II-V semiconductor substrate. Inventively, an electrically conductive III-V semiconductor substrate is provided that exhibits a charge carrier concentration of more than 1*10.sup.15 cm.sup.-3. At least one electrically insulating oxide layer is provided between the functional semiconductor structure and the III-V semiconductor substrate.
公开/授权文献
- USD399057S Portable case 公开/授权日：1998-10-06
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