发明授权
- 专利标题： Multi-zone RF inductively coupled source configuration
- 专利标题（中）： 多区域射频感应耦合源配置
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申请号： US865432申请日： 1997-05-29
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公开(公告)号： US6083344A公开(公告)日： 2000-07-04
- 发明人: Hiroji Hanawa , Tetsuya Ishikawa , Manus Wong , Shijian Li , Kaveh Niazi , Kenneth Smyth , Fred C. Redeker , Troy Detrick , Jay Dee Pinson, II
- 申请人： Hiroji Hanawa , Tetsuya Ishikawa , Manus Wong , Shijian Li , Kaveh Niazi , Kenneth Smyth , Fred C. Redeker , Troy Detrick , Jay Dee Pinson, II
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H05H1/00
摘要：
The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.