发明授权
- 专利标题: Electrolytic capacitor and method for producing the same
- 专利标题(中): 电解电容器及其制造方法
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申请号: US179710申请日: 1998-10-27
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公开(公告)号: US6088218A公开(公告)日: 2000-07-11
- 发明人: Takahiro Hamada , Emiko Igaki , Masakazu Tanahashi , Chiharu Hayashi , Yasunobu Tsuji
- 申请人: Takahiro Hamada , Emiko Igaki , Masakazu Tanahashi , Chiharu Hayashi , Yasunobu Tsuji
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX9-316283 19971031
- 主分类号: H01G9/00
- IPC分类号: H01G9/00 ; H01G9/02 ; H01G9/025
摘要:
The present invention provides a method for producing an electrolytic capacitor including a porous body of a valve metal, an oxide film on a surface of the valve metal, and a conductive polymer layer on a surface of the oxide film. The step of forming the conductive polymer layer on the surface of the oxide film includes the steps of dipping the porous body in a monomer solution; lifting the porous body from the monomer solution and dipping the porous body in an oxidizing solution; and lifting the porous body from the oxidizing solution and allowing the porous body to stand. In the step of dipping the porous body in the oxidizing solution, a period for which the porous body is dipped in the oxidizing solution is equal to or shorter than a period in which 30% of the monomer contained in pores of the porous body diffuses and flows into the oxidizing solution. Alternatively, the volume of the oxidizing solution can be less than three times that of the porous body. The above method can be performed by replacing the monomer solution and the oxidizing solution with each other. Furthermore, a temperature of the porous body is maintained at a low temperature (e.g., 10.degree. C. or less) in the step of dipping the porous body in the oxidizing solution.
公开/授权文献
- US5420437A Method and apparatus for generation and implantation of ions 公开/授权日:1995-05-30
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