发明授权
- 专利标题: Rapid thermal processor for heating a substrate
- 专利标题(中): 用于加热衬底的快速热处理器
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申请号: US227210申请日: 1999-01-08
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公开(公告)号: US6091889A公开(公告)日: 2000-07-18
- 发明人: Jenn-Gwo Hwu , Kuo-Chung Lee , Hong Chang , Chien-Lung Chen
- 申请人: Jenn-Gwo Hwu , Kuo-Chung Lee , Hong Chang , Chien-Lung Chen
- 申请人地址: TWX Taipei
- 专利权人: National Science Council
- 当前专利权人: National Science Council
- 当前专利权人地址: TWX Taipei
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; A21B2/00
摘要:
A planar inverted-cone susceptor, preferably made of silicon carbide, inversely disposed between a substrate and a holder of the Rapid Thermal Processor (RTP) so as to perform heat compensation on the substrate. Because the substrate is directly supported by the inverted-cone susceptor, heat stored in the wafer can be rapidly received by the inverted-cone susceptor. Thermal stress and thermal gradient can be effectively decreased in the wafer.
公开/授权文献
- US5438384A Photographic apparatus 公开/授权日:1995-08-01
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