发明授权
- 专利标题： Method of making a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US898992申请日： 1997-07-23
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公开(公告)号： US6096582A公开(公告)日： 2000-08-01
- 发明人: Shunsuke Inoue , Mamoru Miyawaki , Tetsunobu Kohchi
- 申请人： Shunsuke Inoue , Mamoru Miyawaki , Tetsunobu Kohchi
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-35729 19920128; JPX4-40494 19920131
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/762 ; H01L21/8238 ; H01L27/06 ; H01L27/12 ; H01L29/786 ; H01L21/00
摘要：
A method of making a semiconductor device is disclosed in which the device has an insulated gate transistor in which source and drain regions are provided in a single crystal semiconductor layer formed on an insulating layer with a channel region interposed between the source and drain regions. The insulating layers just below the source and drain regions are made thicker than an insulating layer just below the channel region. The method uses substrate bonding to achieve the device.
公开/授权文献
- US5252587A N-derivatives of 1-deoxy nojirimycin 公开/授权日：1993-10-12
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