发明授权
US6097640A Memory and circuit for accessing data bits in a memory array in
multi-data rate operation
有权
用于以多数据速率操作访问存储器阵列中的数据位的存储器和电路
- 专利标题: Memory and circuit for accessing data bits in a memory array in multi-data rate operation
- 专利标题(中): 用于以多数据速率操作访问存储器阵列中的数据位的存储器和电路
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申请号: US195743申请日: 1998-11-18
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公开(公告)号: US6097640A公开(公告)日: 2000-08-01
- 发明人: Kamin Fei , Hua Zheng , Teng Su
- 申请人: Kamin Fei , Hua Zheng , Teng Su
- 申请人地址: CNX Hsinchu, Taiwan
- 专利权人: Winbond Electronics Corporation
- 当前专利权人: Winbond Electronics Corporation
- 当前专利权人地址: CNX Hsinchu, Taiwan
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; G11C7/00
摘要:
A method and circuit for accessing data bits in a memory array in a multi-data rate operation. In one architecture, a memory device includes a memory array for storing data values, multiple (N) sensing circuits, multiple (K) control lines, and an I/O pad. One sensing circuit couples to each data value being retrieved from the memory device. The I/O pad operatively couples to the sensing circuits. And each control line couples to at least one sensing circuit and has a clock phase unique from remaining control lines.
公开/授权文献
- US4845441A Amplifier circuit with bipolar transistors 公开/授权日:1989-07-04
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