发明授权
- 专利标题： Low dielectric constant coating of conductive material in a damascene process for semiconductors
- 专利标题（中）： 半导体镶嵌工艺中导电材料的低介电常数涂层
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申请号： US305906申请日： 1999-05-05
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公开(公告)号： US6100181A公开(公告)日： 2000-08-08
- 发明人: Lu You , John A. Iacoponi
- 申请人： Lu You , John A. Iacoponi
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/58
摘要：
A method for manufacturing an integrated circuit using damascene processes is provided in which planar surfaces subjected to chemical-mechanical polishing are protected by a protective low dielectric constant coating. The coatings are of organic silicon materials which are spun on and baked in preparation of the deposition of subsequent dielectric layers.
公开/授权文献
- US5633686A Adaptive digital video system 公开/授权日：1997-05-27