发明授权
US6100568A Semiconductor device including a memory cell and peripheral portion and
method for forming same
失效
包括存储单元和周边部分的半导体器件及其形成方法
- 专利标题: Semiconductor device including a memory cell and peripheral portion and method for forming same
- 专利标题(中): 包括存储单元和周边部分的半导体器件及其形成方法
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申请号: US963580申请日: 1997-11-06
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公开(公告)号: US6100568A公开(公告)日: 2000-08-08
- 发明人: Craig S. Lage
- 申请人: Craig S. Lage
- 申请人地址: IL Schaumburg
- 专利权人: Motorola, Inc.
- 当前专利权人: Motorola, Inc.
- 当前专利权人地址: IL Schaumburg
- 主分类号: H01L21/8244
- IPC分类号: H01L21/8244 ; H01L27/11 ; H01L27/092
摘要:
A semiconductor device including a substrate (220) having a primary surface, a memory cell (202) provided on the substrate, the memory cell (202) including a P-channel transistor, the P-channel transistor having an N-type gate (72), and peripheral portion (204) provided on the substrate, the peripheral portion including a P-channel transistor , the P-channel transistor having a P-type gate (99). A method for forming the semiconductor device is also disclosed.
公开/授权文献
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