发明授权
- 专利标题： Semiconductor device and method of producing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US299663申请日： 1999-04-27
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公开(公告)号： US6104085A公开(公告)日： 2000-08-15
- 发明人: Kuniharu Muto , Atsushi Nishikizawa , Jyunichi Tsuchiya , Toshiyuki Hata , Nobuya Koike , Ichio Shimizu
- 申请人： Kuniharu Muto , Atsushi Nishikizawa , Jyunichi Tsuchiya , Toshiyuki Hata , Nobuya Koike , Ichio Shimizu
- 申请人地址： JPX Tokyo JPX Saitama
- 专利权人： Hitachi, Ltd.,Hitachi Tohbu Semiconductor, Ltd.
- 当前专利权人： Hitachi, Ltd.,Hitachi Tohbu Semiconductor, Ltd.
- 当前专利权人地址： JPX Tokyo JPX Saitama
- 优先权： JPX6-288793 19941028
- 主分类号： H01L23/28
- IPC分类号： H01L23/28 ; H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L21/56 ; H01L21/60 ; H01L23/02 ; H01L23/29 ; H01L23/433 ; H01L23/495
摘要：
A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat-radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
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