发明授权
- 专利标题： Method for producing a photovoltaic element with zno layer having increasing fluorine content in layer thickness direction
- 专利标题（中）： 一种具有层厚度方向氟含量增加的zno层的光电元件的制造方法
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申请号： US134929申请日： 1998-08-17
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公开(公告)号： US6107116A公开(公告)日： 2000-08-22
- 发明人: Toshimitsu Kariya , Keishi Saito
- 申请人： Toshimitsu Kariya , Keishi Saito
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224 ; H01L31/075 ; H01L31/18 ; H01L31/20 ; C23C14/34 ; C23C14/08
摘要：
A photovoltaic element is formed by providing a substrate under vacuum; introducing a sputter gas and applying RF power to generate a plasma and provide a photovoltaic element having a substrate, a zinc oxide layer containing fluorine on the substrate, wherein a fluorine-containing zinc oxide layer is employed as a target.