发明授权
US6107638A Silicon nitride circuit substrate and semiconductor device containing
same
失效
氮化硅电路基板和含有它们的半导体器件
- 专利标题： Silicon nitride circuit substrate and semiconductor device containing same
- 专利标题（中）： 氮化硅电路基板和含有它们的半导体器件
-
申请号： US42453申请日： 1998-03-16
-
公开(公告)号： US6107638A公开(公告)日： 2000-08-22
- 发明人: Hiroyasu Sumino , Akihiro Horiguchi , Mitsuo Kasori , Fumio Ueno
- 申请人： Hiroyasu Sumino , Akihiro Horiguchi , Mitsuo Kasori , Fumio Ueno
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX9-060997 19970314; JPX9-251154 19970916
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L23/15 ; H01L23/373 ; H05K3/38 ; H01L29/12
摘要：
Disclosed is a silicon nitride circuit substrate, a manufacturing procee thereof, and a semiconductor device therewith. The circuit substrate comprises: a silicon nitride substrate; a metal circuit plate; and a intermediate layer being interposed between the silicon nitride board and the metal circuit plate for joining the silicon nitride substrate and the metal circuit plate, and having a compound containing an aluminum oxide component. The concentration of the aluminum oxide component in the intermediate layer is higher in the side of the metal circuit plate than in the side of the silicon nitride board.
公开/授权文献
- USD387340S Ergonomic keyboard 公开/授权日：1997-12-09