发明授权
US6110530A CVD method of depositing copper films by using improved organocopper
precursor blend
失效
通过使用改进的有机铜前体共混物沉积铜膜的CVD方法
- 专利标题： CVD method of depositing copper films by using improved organocopper precursor blend
- 专利标题（中）： 通过使用改进的有机铜前体共混物沉积铜膜的CVD方法
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申请号： US339970申请日： 1999-06-25
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公开(公告)号： US6110530A公开(公告)日： 2000-08-29
- 发明人: Ling Chen , Seshadri Ganguli , Bo Zheng , Samuel Wilson , Christophe Marcadal
- 申请人： Ling Chen , Seshadri Ganguli , Bo Zheng , Samuel Wilson , Christophe Marcadal
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： C23C16/18
- IPC分类号： C23C16/18 ; C23C16/448
摘要：
Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1.0 to 5.0 percent by weight of trimethylvinylsilane that is vaporized in a vaporizer, and passed into a chemical vapor deposition chamber. Separately up to about 2 percent by weight of the precursor blend of water vapor is added directly to the chamber.