发明授权
US6117715A Methods of fabricating integrated circuit field effect transistors by
performing multiple implants prior to forming the gate insulating layer
thereof
有权
在形成集成电路场效应晶体管之前，通过在形成其栅极绝缘层之前执行多个注入来制造方法
- 专利标题： Methods of fabricating integrated circuit field effect transistors by performing multiple implants prior to forming the gate insulating layer thereof
- 专利标题（中）： 在形成集成电路场效应晶体管之前，通过在形成其栅极绝缘层之前执行多个注入来制造方法
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申请号： US143131申请日： 1998-08-28
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公开(公告)号： US6117715A公开(公告)日： 2000-09-12
- 发明人: Dae-Won Ha
- 申请人： Dae-Won Ha
- 申请人地址： KRX
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX
- 优先权： KRX97-43559 19970830
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/265 ; H01L21/336 ; H01L21/8234
摘要：
Multiple implants are performed in an integrated circuit substrate by implanting ions into a face thereof. Then, a gate insulating layer and a gate electrode are formed on the face of the integrated circuit substrate after performing the multiple implants in the integrated circuit substrate. Preferably, ions are not implanted into the integrated circuit substrate through the face after forming the gate insulating layer and the gate electrode on the face of the integrated circuit substrate. By preferably performing all implants prior to forming a gate insulating layer, the gate insulating layer is not degraded by implanting ions into the face of the integrated circuit substrate through the gate insulating layer.
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