A field emission display and a method for fabricating the same are disclosed. The method includes the steps of: forming a silicon mold; growing a diamond on the silicon mold, to form a diamond tip; forming a conductive layer on the diamond tip; bonding a first substrate to the conductive layer; removing the silicon mold; forming a gate insulating layer and gate electrode on the diamond tip; and etching the gate electrode and gate insulating layer to expose an electron emission portion of the tip, and thereby form a gate hole. By doing so, the operation voltage is reduced, compared with the diode-type display, and high-responsibility field emission display can be realized by applying (-) or (+) voltage to the gate electrode.