发明授权
- 专利标题: Semiconductor type pressure sensor
- 专利标题(中): 半导体式压力传感器
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申请号: US139273申请日: 1998-08-25
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公开(公告)号: US6122974A公开(公告)日: 2000-09-26
- 发明人: Shinya Sato , Seikou Suzuki , Shinichi Yamaguchi , Yoshiyuki Sasada , Masayuki Miki , Masanori Kubota , Atsushi Miyazaki
- 申请人: Shinya Sato , Seikou Suzuki , Shinichi Yamaguchi , Yoshiyuki Sasada , Masayuki Miki , Masanori Kubota , Atsushi Miyazaki
- 申请人地址: Tokyo JPX Ibaraki-ken
- 专利权人: Hitachi, Ltd.,Hitachi Car Engineering Co., Ltd.
- 当前专利权人: Hitachi, Ltd.,Hitachi Car Engineering Co., Ltd.
- 当前专利权人地址: Tokyo JPX Ibaraki-ken
- 优先权: JPX9-227751 19970825
- 主分类号: G01L9/04
- IPC分类号: G01L9/04 ; G01L9/00 ; G01L7/08
摘要:
A pressure sensor superior in pressure resistance and capable of covering from a low to high pressure range as a measuring range is to be provided. Plural pressure sensing sections for high and low pressures are formed on a silicon board, the pressure sensing sections each com ing an outer frame portion, a diaphragm portion, a strain gauge portion and an electrode portion. The silicon board side with the strain gauge portions formed thereon and an insulating substrate having electrode take-out portions are bonded together in such a manner that the strain gauge portions are hermetically sealed and that the electrode portions on the silicon board and the electrode take-out portions of the insulating substrate are electrically connected with each other, to constitute a pressure sensing unit. The pressure sensing unit, a low-melting glass and a stem are laminated together in such a manner that lead pins are electrically bonded by solder to the electrode portions of the silicon board through the electrode take-out portions of the insulating substrate. In this state, the low-melting glass is melted to bond the pressure sensing unit and the stem with each other.
公开/授权文献
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