发明授权
- 专利标题： Anti-reflection oxynitride film for tungsten-silicide substrates
- 专利标题（中）： 硅化钨衬底的抗反射氧氮化物膜
-
申请号： US18100申请日： 1998-02-03
-
公开(公告)号： US6133613A公开(公告)日： 2000-10-17
- 发明人: Liang-Gi Yao , John Chin-Hsiang Lin , Hua-Tai Lin
- 申请人： Liang-Gi Yao , John Chin-Hsiang Lin , Hua-Tai Lin
- 申请人地址： TWX Hsinchu
- 专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人地址： TWX Hsinchu
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/3213 ; H01L23/58
摘要：
The present invention provides an anti-reflection film for lithographic application on tungsten-silicide containing substrate. In one embodiment of the present invention, a structure for improving lithography patterning in integrated circuit comprises a tungsten-silicide layer, a diaphanous layer located above the tungsten-silicide layer, an anti-reflection layer located above the diaphanous layer, and a photoresist layer located above the anti-reflection layer for patterning the integrated circuit pattern.
公开/授权文献
信息查询
IPC分类:
