发明授权
US6140171A FET device containing a conducting sidewall spacer for local
interconnect and method for its fabrication
失效
FET器件包含用于局部互连的导电侧壁间隔件及其制造方法
- 专利标题： FET device containing a conducting sidewall spacer for local interconnect and method for its fabrication
- 专利标题（中）： FET器件包含用于局部互连的导电侧壁间隔件及其制造方法
-
申请号： US233549申请日： 1999-01-20
-
公开(公告)号： US6140171A公开(公告)日： 2000-10-31
- 发明人: Archibald John Allen , Jerome Brett Lasky , Randy William Mann , John Joseph Pekarik , Jed Hickory Rankin , Edward William Sengle , Francis Roger White
- 申请人： Archibald John Allen , Jerome Brett Lasky , Randy William Mann , John Joseph Pekarik , Jed Hickory Rankin , Edward William Sengle , Francis Roger White
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/768 ; H01L29/417
摘要：
A FET device comprising a semiconductor substrate; diffusion regions in the substrate separated by a channel region; a gate overlapping the channel region and a portion of the diffusion regions and separated from the substrate by a gate dielectric; and a sidewall dielectric on a sidewall of the gate; and a sidewall spacer conductor on the sidewall dielectric contacting one of the diffusion regions but not both of the diffusion regions of one device is provided along with a method for its fabrication. The conductive spacer connects diffusions of adjacent devices that share a common gate electrode.