- 专利标题： Technique for extending the limits of photolithography
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申请号： US116791申请日： 1998-07-16
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公开(公告)号： US6140217A公开(公告)日： 2000-10-31
- 发明人: Harris C. Jones , James G. Ryan
- 申请人： Harris C. Jones , James G. Ryan
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/768 ; H01L23/528 ; H01L21/44
摘要：
A method of forming a wiring pattern in a device comprises forming an array of grooves in a mask, forming first spacers adjacent vertical walls of the grooves, removing the mask, forming second spacers adjacent the first spacers, and filling areas between the first spacers and areas between the second spacers with a material to form the wiring pattern.
公开/授权文献
- USD431617S Back bend bench 公开/授权日：2000-10-03
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