发明授权
- 专利标题: Semiconductor integrated circuit
- 专利标题(中): 半导体集成电路
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申请号: US441659申请日: 1999-11-16
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公开(公告)号: US6140834A公开(公告)日: 2000-10-31
- 发明人: Toshiro Takahashi
- 申请人: Toshiro Takahashi
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-342519 19961206
- 主分类号: G11C11/417
- IPC分类号: G11C11/417 ; G11C11/401 ; G11C11/407 ; G11C11/409 ; H01L21/8234 ; H01L27/088 ; H03K19/003 ; H03K19/0175 ; H03K19/0185 ; H03F3/45
摘要:
A semiconductor integrated circuit including an input circuit constituted as a single-input differential circuit which has a first MOSFET to whose gate a reception signal with a small amplitude with respect to a power supply voltage is supplied and a second MOSFET to whose gate a reference voltage corresponding to an intermediate value of the reception signal is supplied. A dummy circuit is provided and transmits substantially the same power supply noise as the power supply noise transmitted to the gate of the first MOSFET through a electrostatic protection circuit provided to an external terminal which receives the reception signal.
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