Invention Grant
US6141282A Circuit for designating an operating mode of a semiconductor memory
device
有权
用于指定半导体存储器件的工作模式的电路
- Patent Title: Circuit for designating an operating mode of a semiconductor memory device
- Patent Title (中): 用于指定半导体存储器件的工作模式的电路
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Application No.: US234779Application Date: 1999-01-20
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Publication No.: US6141282APublication Date: 2000-10-31
- Inventor: Choong-Sun Chin , Hyung-Kyu Lim
- Applicant: Choong-Sun Chin , Hyung-Kyu Lim
- Applicant Address: KRX Suwon
- Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee Address: KRX Suwon
- Priority: KRX95-8689 19950413
- Main IPC: G11C11/407
- IPC: G11C11/407 ; G11C7/10 ; G11C17/18 ; G11C7/00
Abstract:
A circuit for designating an operating mode of a packaged semiconductor memory device includes a first fuse mounted on the device. A plurality of pads mounted on the device are accessible to a user after the device is packaged. A mode selection circuit generates a first signal when the first fuse is open and a second signal when the first fuse is closed. A first-fuse opening circuit is operably connected to the pads and opens the first fuse responsive to a predetermined first-fuse cutting signal on the pads. In another aspect of the invention, a second fuse may be opened responsive to a predetermined second-fuse cutting signal on the pads. When the second fuse opens, the first-fuse opening circuit is disabled to prevent accidental opening of the first fuse when the desired operating mode requires the first fuse to be maintained intact.
Public/Granted literature
- US4880892A Composition comprising an epoxy resin, a phenol and an advancement catalyst Public/Granted day:1989-11-14
Information query
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