发明授权
- 专利标题： Protective liner for isolation trench side walls and method
- 专利标题（中）： 隔离沟侧墙保护衬垫及方法
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申请号： US151374申请日： 1998-09-10
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公开(公告)号： US6143625A公开(公告)日： 2000-11-07
- 发明人: Ih-Chin Chen , Amitava Chatterjee , Somnath S. Nag
- 申请人： Ih-Chin Chen , Amitava Chatterjee , Somnath S. Nag
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/76
摘要：
An isolation trench (60) may comprise a trench (20) formed in a semiconductor layer (12). A barrier layer (22) may be formed along the trench (20). A protective liner (50) may be formed over the barrier layer (22). The protective liner (50) may comprise a chemically deposited oxide. A high density layer of insulation material (55) may be formed in the trench (20) over the protective liner (50).
公开/授权文献
- US4346868A Display device 公开/授权日：1982-08-31