发明授权
- 专利标题： Method of processing semiconductor device with laser
- 专利标题（中）： 用激光加工半导体器件的方法
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申请号： US133330申请日： 1998-08-13
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公开(公告)号： US6143661A公开(公告)日： 2000-11-07
- 发明人: Takamasa Kousai , Hongyong Zhang , Akiharu Miyanaga
- 申请人： Takamasa Kousai , Hongyong Zhang , Akiharu Miyanaga
- 申请人地址： JPX Kanagawa JPX Osaka
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Kanagawa JPX Osaka
- 优先权： JPX6-309826 19941118
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/268 ; H01L21/324 ; H01L21/336 ; H01L21/77 ; H01L29/786 ; H01L21/302
摘要：
A method of fabricating a semiconductor device by the use of laser crystallization steps is provided. During these crystallization steps, an amorphous or polycrystalline semiconductor is crystallized by laser irradiation in such a way that generation of ridges is suppressed. Two separate laser crystallization steps are carried out. First, a laser irradiation step is performed in a vacuum, using somewhat weak laser light. Then, another laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient with intenser laser light. The first laser irradiation conducted in a vacuum does not result in satisfactory crystallization. However, this irradiation can suppress generation of ridges. The second laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient to achieve sufficient crystallization, but no ridges are produced.
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