发明授权
- 专利标题： Low resistivity semiconductor barrier layers and manufacturing method therefor
- 专利标题（中）： 低电阻半导体阻挡层及其制造方法
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申请号： US166617申请日： 1998-10-05
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公开(公告)号： US6144096A公开(公告)日： 2000-11-07
- 发明人: Sergey D. Lopatin
- 申请人： Sergey D. Lopatin
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L24/48
摘要：
A semiconductor, and manufacturing method therefor, is provided with a barrier/adhesion layer, having cobalt, nickel, or palladium for semiconductors having conductive materials of copper, silver or gold. The barrier/adhesion layer can be alloyed with between about 0.2% and 4% tantalum, molybdenum, or tungsten to increase barrier effectiveness and lower resistivity.
公开/授权文献
- US4341940A Monitoring resistance welding 公开/授权日：1982-07-27
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