发明授权
- 专利标题： Method for manufacturing memory devices
- 专利标题（中）： 制造存储器件的方法
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申请号： US146032申请日： 1998-09-02
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公开(公告)号： US6146795A公开(公告)日： 2000-11-14
- 发明人: Jiahua Huang , Yuesong He , Kent Kuohua Chang
- 申请人： Jiahua Huang , Yuesong He , Kent Kuohua Chang
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： G03F7/36
- IPC分类号： G03F7/36 ; G03F7/40
摘要：
Tunnel oxide degradation is reduced by reducing residual photoresist material in open areas of a mask pattern. Embodiments include detecting residual photoresist in an exposed underlying region of a substrate by x-ray spectroscopy and descumming in response to detected residual photoresist.
公开/授权文献
- US5477717A Apparatus for cutting helically wound metal tubing 公开/授权日：1995-12-26