发明授权
- 专利标题: Method of fabricating an active-matrix liquid crystal display
- 专利标题(中): 制造有源矩阵液晶显示器的方法
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申请号: US988001申请日: 1997-12-10
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公开(公告)号: US6146930A公开(公告)日: 2000-11-14
- 发明人: Kazuhiro Kobayashi , Yuichi Masutani , Hiroyuki Murai
- 申请人: Kazuhiro Kobayashi , Yuichi Masutani , Hiroyuki Murai
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX6-106794 19940520
- 主分类号: H01L21/77
- IPC分类号: H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/786 ; H01L21/336 ; H01L21/8238
摘要:
An active-matrix liquid crystal display integrally formed with a driver circuit including: a pair of substrates disposed in opposing relation to each other; and a liquid crystal material sandwiched between the pair of substrates,wherein the pair of substrates includes:a TFT substrate including at least an insulative substrate, source interconnection line and gate interconnection line which are formed in a matrix pattern on the insulative substrate, a thin film transistor provided to each pixel portion for use as a switching element for applying a voltage to a portion of the liquid crystal material which lies at a location where the source interconnection line and the gate interconnection line intersect each other, a pixel electrode connected to a drain electrode of the thin film transistor for supplying a voltage to the liquid crystal material, and a CMOS driver circuit having a CMOS which comprises thin film transistors for supplying an electric signal to the thin film transistor of the pixel portion through the source interconnection line and the gate interconnection line; anda counterpart substrate including an insulative substrate and a counter electrode formed thereon,the thin film transistor provided to the pixel portion being of a first conductivity type and of an offset or LDD structure,at least a first conductivity type thin film transistor of the thin film transistors of the CMOS driver circuit being of an offset or LDD structure.
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