Invention Grant
US6146979A Pressurized microbubble thin film separation process using a reusable
substrate
失效
加压微泡薄膜分离工艺使用可重复使用的基材
- Patent Title: Pressurized microbubble thin film separation process using a reusable substrate
- Patent Title (中): 加压微泡薄膜分离工艺使用可重复使用的基材
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Application No.: US26032Application Date: 1998-02-19
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Publication No.: US6146979APublication Date: 2000-11-14
- Inventor: Francois J. Henley , Nathan W. Cheung
- Applicant: Francois J. Henley , Nathan W. Cheung
- Applicant Address: CA Campbell
- Assignee: Silicon Genesis Corporation
- Current Assignee: Silicon Genesis Corporation
- Current Assignee Address: CA Campbell
- Main IPC: B24C1/00
- IPC: B24C1/00 ; B26F3/00 ; B26F3/02 ; B32B5/16 ; B81C1/00 ; H01L21/00 ; H01L21/18 ; H01L21/20 ; H01L21/22 ; H01L21/223 ; H01L21/265 ; H01L21/30 ; H01L21/301 ; H01L21/302 ; H01L21/304 ; H01L21/36 ; H01L21/38 ; H01L21/425 ; H01L21/44 ; H01L21/46 ; H01L21/461 ; H01L21/48 ; H01L21/50 ; H01L21/762 ; H01L21/78 ; H01L21/8238
Abstract:
A technique for forming films of material (14) from a donor substrate (10). The technique has a step of introducing gas-forming particles (12) through a surface of a donor substrate (10) to a selected depth underneath the surface. The gas-forming particles form a layer of microbubbles within the substrate. A global heat treatment of the substrate then creates a pressure effect to separate a thin film of material from the substrate. Additional gas-forming particles are introduced into the donor substrate and a second thin film of material is then separated from the donor substrate. In a specific embodiment, the gas-forming particles are implanted using a plasma immersion ion implantation method.
Public/Granted literature
- USD360278S Table lamp Public/Granted day:1995-07-11
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